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RJH60F3DPK High Speed Power Switching

RJH60F3DPK Description

Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJH60F3DPK Features

* Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology
* High speed switching tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 2

RJH60F3DPK Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and te

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High Speed Power Switching Renesas
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