RJH60F4DPK IGBT Datasheet - Renesas Technology

RJH60F4DPK Features

Igbt
High speed switching
Low on-state voltage
Fast recovery diode www.DataSheet4U.com Preliminary REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Pac

PDF File Details

Part number:

RJH60F4DPK

Manufacturer:

Renesas ↗ Technology

File Size:

241.42kb

Download:

📄 Datasheet

Description:

Silicon n channel igbt.

📥 Download PDF (241.42kb)

RJH60F4DPK Application

Applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or tec

TAGS

📁 Related Datasheet

RJH60F4DPQ-A0 - High Speed Power Switching (Renesas)
Preliminary Datasheet RJH60F4DPQ-A0 600 V - 30 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = .

RJH60F0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode .DataShe.

RJH60F0DPQ-A0 - High Speed Power Switching (Renesas)
Preliminary Datasheet RJH60F0DPQ-A0 600 V - 25 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = .

RJH60F3DPK - High Speed Power Switching (Renesas)
Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = .

RJH60F3DPQ-A0 - High Speed Power Switching (Renesas)
Preliminary Datasheet RJH60F3DPQ-A0 600 V - 20 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = .

RJH60F5BDPQ-A0 - IGBT (Renesas)
Preliminary Datasheet RJH60F5BDPQ-A0 600V - 40A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.

RJH60F5DPK - Silicon N-Channel IGBT (Renesas Technology)
Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features  Low collector .

RJH60F5DPQ-A0 - High Speed Power Switching (Renesas)
Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = .

RJH60F6BDPQ-A0 - IGBT (Renesas)
Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.

RJH60F6DPK - Silicon N-Channel IGBT (Renesas Technology)
Preliminary Datasheet RJH60F6DPK Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = .

Stock and price