RJH60F6DPQ-A0 - High Speed Power Switching

Renesas

The RJH60F6DPQ-A0 by Renesas is a High Speed Power Switching. Below is the official datasheet preview.

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RJH60F6DPQ-A0 High Speed Power Switching by Renesas - Datasheet Preview — Official preview page of the **RJH60F6DPQ-A0** High Speed Power Switching datasheet (Renesas).

Datasheet Details

Part number	RJH60F6DPQ-A0
Manufacturer	Renesas
File Size	151.34 KB
Description	High Speed Power Switching
Datasheet	RJH60F6DPQ-A0_Renesas.pdf
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RJH60F6DPQ-A0 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0327EJ0200 Rev.2.00 Jul 22, 2011 Outline.

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Published: Jul 20, 2012 |