RJH60F6BDPQ-A0

IGBT

Renesas

RJH60F6BDPQ-A0 Features

* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode in one package

* Trench gate and thin wafer technology

* High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta

RJH60F6BDPQ-A0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJH60F6BDPQ-A0 Datasheet (159.54 KB)