RJH60F6BDPQ-A0 - IGBT

Name: RJH60F6BDPQ-A0
SKU: RJH60F6BDPQ-A0-721572

Renesas

The RJH60F6BDPQ-A0 by Renesas is a IGBT. Below is the official datasheet preview.

📥 Download Datasheet

RJH60F6BDPQ-A0 IGBT by Renesas - Datasheet Preview — Official preview page of the **RJH60F6BDPQ-A0** IGBT datasheet (Renesas).

Datasheet Details

Part number	RJH60F6BDPQ-A0
Manufacturer	Renesas
File Size	159.54 KB
Description	IGBT
Datasheet	RJH60F6BDPQ-A0_Renesas.pdf
Additional preview pages of the RJH60F6BDPQ-A0 datasheet.

RJH60F6BDPQ-A0 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0632EJ0100 Rev.1.00 Feb 17, 2012 Outline.

📁 RJH60F6BDPQ-A0 Similar Datasheet

RJH60F6DPK - Silicon N-Channel IGBT (Renesas Technology)
RJH60F0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60F4DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60F5DPK - Silicon N-Channel IGBT (Renesas Technology)
RJH60F7ADPK - Silicon N Channel IGBT (Renesas Technology)
RJH60C9DPD - Silicon N Channel IGBT (Renesas Technology)
RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPE - Silicon N Channel IGBT (Renesas Technology)

Other Datasheets by Renesas

RJH60F6DPQ-A0 - High Speed Power Switching
RJH60F0DPQ-A0 - High Speed Power Switching
RJH60F3DPK - High Speed Power Switching
RJH60F3DPQ-A0 - High Speed Power Switching
RJH60F4DPQ-A0 - High Speed Power Switching
RJH60F5BDPQ-A0 - IGBT

Published: Jul 20, 2012 |