RJH60F6BDPQ-A0 Datasheet, Igbt, Renesas

✔ RJH60F6BDPQ-A0 Features

Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and

✔ RJH60F6BDPQ-A0 Application

or use by the military, including but not limited to the development of weapo

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Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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RJH60F6BDPQ-A0 IGBT Renesas