RJH60F6BDPQ-A0 Datasheet (Renesas)

RJH60F6BDPQ-A0, IGBT

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Renesa

RJH60F6BDPQ-A0 Features

* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode in one package

* Trench gate and thin wafer technology

* High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta