Part number:
RJH60F5DPK
Manufacturer:
Renesas ↗ Technology
File Size:
85.79 KB
Description:
Silicon n-channel igbt.
RJH60F5DPK_RenesasTechnology.pdf
Datasheet Details
RJH60F5DPK Features
* Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology
* High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =
RJH60F5DPK_RenesasTechnology.pdf
Datasheet Details
RJH60F5DPK
Renesas ↗ Technology
85.79 KB
Silicon n-channel igbt.
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