RJH60F5DPK

Silicon N-Channel IGBT

Renesas Technology

* Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode in one package

* Trench gate and thin wafer technology

* High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

RJH60F5DPK

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Silicon n-channel igbt.

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RJH60F5DPK Silicon N-Channel IGBT Renesas Technology

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