RJH60F5DPK Silicon N-Channel IGBT

Renesas Technology

RJH60F5DPK Description

Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 .

RJH60F5DPK Features

* Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology
* High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

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Datasheet Details

Part number: RJH60F5DPK
Manufacturer: Renesas ↗ Technology
File Size: 85.79 KB
Datasheet: RJH60F5DPK_RenesasTechnology.pdf
Description: Silicon N-Channel IGBT

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Silicon N-Channel IGBT Renesas Technology

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