RJH60F5DPK Datasheet, Igbt, Renesas Technology

RJH60F5DPK Features

• Igbt
• Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode in one package
• Trench ga

PDF File Details

Part number:

RJH60F5DPK

Manufacturer:

Renesas ↗ Technology

File Size:

85.79kb

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📄 Datasheet

Description:

Silicon n-channel igbt.

TAGS

RJH60F5DPK

Renesas Technology

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