RJH60F5DPQ-A0 - High Speed Power Switching

Renesas

The RJH60F5DPQ-A0 by Renesas is a High Speed Power Switching. Below is the official datasheet preview.

📥 Download Datasheet

RJH60F5DPQ-A0 High Speed Power Switching by Renesas - Datasheet Preview — Official preview page of the **RJH60F5DPQ-A0** High Speed Power Switching datasheet (Renesas).

Datasheet Details

Part number	RJH60F5DPQ-A0
Manufacturer	Renesas
File Size	150.21 KB
Description	High Speed Power Switching
Datasheet	RJH60F5DPQ-A0_Renesas.pdf
Additional preview pages of the RJH60F5DPQ-A0 datasheet.

RJH60F5DPQ-A0 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0326EJ0200 Rev.2.00 Jul 22, 2011 Outline.

📁 RJH60F5DPQ-A0 Similar Datasheet

RJH60F5DPK - Silicon N-Channel IGBT (Renesas Technology)
RJH60F0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60F4DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60F6DPK - Silicon N-Channel IGBT (Renesas Technology)
RJH60F7ADPK - Silicon N Channel IGBT (Renesas Technology)
RJH60C9DPD - Silicon N Channel IGBT (Renesas Technology)
RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPE - Silicon N Channel IGBT (Renesas Technology)

Other Datasheets by Renesas

RJH60F5BDPQ-A0 - IGBT
RJH60F0DPQ-A0 - High Speed Power Switching
RJH60F3DPK - High Speed Power Switching
RJH60F3DPQ-A0 - High Speed Power Switching
RJH60F4DPQ-A0 - High Speed Power Switching
RJH60F6BDPQ-A0 - IGBT

Published: Jul 20, 2012 |