RJH60F6DPK Datasheet, Igbt, Renesas Technology

RJH60F6DPK Features

• Igbt
• Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)
• Built in fast recovery diode in one package
• Trench

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Part number:

RJH60F6DPK

Manufacturer:

Renesas ↗ Technology

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103.47kb

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📄 Datasheet

Description:

Silicon n-channel igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJH60F6DPK Application

• Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

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RJH60F6DPK

Renesas Technology

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