RJH60F6DPK - Silicon N-Channel IGBT

Renesas Technology

The RJH60F6DPK by Renesas Technology is a Silicon N-Channel IGBT. Below is the official datasheet preview.

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RJH60F6DPK Silicon N-Channel IGBT by Renesas Technology - Datasheet Preview — Official preview page of the **RJH60F6DPK** Silicon N-Channel IGBT datasheet (Renesas Technology).

Datasheet Details

Part number	RJH60F6DPK
Manufacturer	Renesas Technology
File Size	103.47 KB
Description	Silicon N-Channel IGBT
Datasheet	RJH60F6DPK_RenesasTechnology.pdf
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RJH60F6DPK Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C) REJ03G1940-0100 Rev.1.00 Jun 18, 2010 Outline.

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Published: Nov 8, 2010 |