Datasheet Details
Part number:
RJH60F6DPK
Manufacturer:
Renesas ↗ Technology
File Size:
103.47 KB
Description:
Silicon N-Channel IGBT
Features
* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology
* High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15
RJH60F6DPK_RenesasTechnology.pdf
RJH60F6DPK, Silicon N-Channel IGBT
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