RJH60F7BDPQ-A0

IGBT

Renesas

* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Tj = 25°C)

* Built in fast recovery diode in one package

* Trench gate and thin wafer technology

* High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Tj

RJH60F7BDPQ-A0

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RJH60F7BDPQ-A0 IGBT Renesas

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