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RJH60F7BDPQ-A0 Datasheet - Renesas

RJH60F7BDPQ-A0_Renesas.pdf

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Datasheet Details

Part number:

RJH60F7BDPQ-A0

Manufacturer:

Renesas ↗

File Size:

212.20 KB

Description:

Igbt.

RJH60F7BDPQ-A0, IGBT

RJH60F7BDPQ-A0 Features

* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Tj = 25°C)

* Built in fast recovery diode in one package

* Trench gate and thin wafer technology

* High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Tj

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