RJH60F7DPQ-A0

High Speed Power Switching

Renesas

RJH60F7DPQ-A0 Features

* 1B R07DS0328EJ0200 Rev.2.00 Jul 22, 2011

* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode in one package

* Trench gate and thin wafer technology

* High speed switching tf = 74 ns typ. (at IC =

RJH60F7DPQ-A0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJH60F7DPQ-A0 Datasheet (150.77 KB)