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RJP60V0DPM - N-Channel IGBT

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Renesas

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RJP60V0DPM N-Channel IGBT by Renesas - Datasheet Preview — Datasheet preview – RJP60V0DPM

Datasheet Details

Part number	RJP60V0DPM
Manufacturer	Renesas
File Size	147.39 KB
Description	N-Channel IGBT
Datasheet	RJP60V0DPM Datasheet
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Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

High breakdown-voltage.
Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C).
Short circuit withstand time (6 s typ. ).
Trench gate and thin wafer technology (G6H series) R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Outline.

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Published: May 2, 2012 |