RJP60V0DPM Datasheet (Renesas)

RJP60V0DPM, N-Channel IGBT

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Renesa

RJP60V0DPM Features

* High breakdown-voltage

* Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

* Short circuit withstand time (6 s typ.)

* Trench gate and thin wafer technology (G6H series) R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Outline RENESAS Pa