RJP60V0DPM

N-Channel IGBT

Renesas

RJP60V0DPM Features

* High breakdown-voltage

* Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

* Short circuit withstand time (6 s typ.)

* Trench gate and thin wafer technology (G6H series) R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Outline RENESAS Pa

RJP60V0DPM General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJP60V0DPM Datasheet (147.39 KB)