RJP60V0DPM N-Channel IGBT

Renesas

RJP60V0DPM Description

Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJP60V0DPM Features

* High breakdown-voltage
* Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
* Short circuit withstand time (6 s typ. )
* Trench gate and thin wafer technology (G6H series) R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Outline RENESAS Pa

RJP60V0DPM Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Datasheet Details

Part number: RJP60V0DPM
Manufacturer: Renesas ↗
File Size: 147.39 KB
Datasheet: RJP60V0DPM_Renesas.pdf
Description: N-Channel IGBT

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