RJP60V0DPM-80 Datasheet (Renesas)

RJP60V0DPM-80, IGBT

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Renesa

RJP60V0DPM-80 Features

* High breakdown-voltage

* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

* Short circuit withstand time (6 μs typ.)

* Trench gate and thin wafer technology (G6H series) Outline RENESAS Package code: PRSS0003ZD-