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RJP60V0DPM-80 - IGBT

Product Overview

Renesas

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RJP60V0DPM-80 IGBT by Renesas - Datasheet Preview — Datasheet preview – RJP60V0DPM-80

Datasheet Details

Part number	RJP60V0DPM-80
Manufacturer	Renesas
File Size	108.62 KB
Description	IGBT
Datasheet	RJP60V0DPM-80 Datasheet
Additional preview pages of the RJP60V0DPM-80 datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

High breakdown-voltage.
Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C).
Short circuit withstand time (6 μs typ. ).
Trench gate and thin wafer technology (G6H series) Outline.

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Published: Apr 28, 2016 |