RJP60V0DPM-80

IGBT

Renesas

RJP60V0DPM-80 Features

* High breakdown-voltage

* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

* Short circuit withstand time (6 μs typ.)

* Trench gate and thin wafer technology (G6H series) Outline RENESAS Package code: PRSS0003ZD-

RJP60V0DPM-80 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJP60V0DPM-80 Datasheet (108.62 KB)