RJP63F3

N-Channel IGBT

Renesas

* Trench gate and thin wafer technology (G6H series)

* Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ

* High speed switching tf = 100 ns typ

* Low leak current ICES = 1 μA max

* Isolated package TO-220FL Outline RENESAS Package code: PRSS00

RJP63F3

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N-channel igbt.

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RJP63F3 N-Channel IGBT Renesas

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