RJP63K2DPK-M0 - N-Channel IGBT

Renesas

RJP63K2DPK-M0 Datasheet Preview — Preview of RJP63K2DPK-M0 PDF

Datasheet Details

Part number	RJP63K2DPK-M0
Manufacturer	Renesas ↗
File Size	215.80 KB
Description	N-Channel IGBT
Datasheet	RJP63K2DPK-M0_Renesas.pdf

RJP63K2DPK-M0 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Outline.

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Published: May 2, 2012 |