RJP63K2DPK-M0

N-Channel IGBT

Renesas

RJP63K2DPK-M0 Features

* Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code

RJP63K2DPK-M0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJP63K2DPK-M0 Datasheet (215.80 KB)