RJP63F3A Features
* Trench gate and thin wafer technology (G6H series)
* Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
* High speed switching tf = 100 ns typ
* Low leak current ICES = 1 μA max
* Isolated package TO-220FL Outline RENESAS Package code: PRSS00
Datasheet Details
RJP63F3A, RJP63F3DPP-M0
240.41 KB
N-channel igbt.
This datasheet PDF includes multiple part numbers: RJP63F3A, RJP63F3DPP-M0.
Please refer to the document for exact specifications by model.
RJP63F3A Distributor
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