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RJP63F3A, RJP63F3DPP-M0 - N-Channel IGBT

Renesas

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RJP63F3A Datasheet Preview — This datasheet PDF includes multiple part numbers: RJP63F3A, RJP63F3DPP-M0. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	RJP63F3A, RJP63F3DPP-M0
Manufacturer	Renesas ↗
File Size	240.41 KB
Description	N-Channel IGBT
Datasheet	RJP63F3DPP-M0_Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: RJP63F3A, RJP63F3DPP-M0. Please refer to the document for exact specifications by model.

RJP63F3A Product details

Features

Trench gate and thin wafer technology (G6H series).
Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ.
High speed switching tf = 100 ns typ.
Low leak current ICES = 1 μA max.
Isolated package TO-220FL Outline.

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Published: Jul 28, 2021 |