RJP63F3DPP-M0 Datasheet (Renesas)

RJP63F3DPP-M0, N-Channel IGBT

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Renesa

RJP63F3DPP-M0 Features

* Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.2.00 May 26, 2011