Datasheet Specifications
- Part number
- RJP63F3DPP-M0
- Manufacturer
- Renesas ↗
- File Size
- 240.41 KB
- Datasheet
- RJP63F3DPP-M0_Renesas.pdf
- Description
- N-Channel IGBT
Description
Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching .
Features
* Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.2.00 May 26, 2011Applications
* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign lawRJP63F3DPP-M0 Distributors
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