TP65H035G4QS
1.03MB
650v supergan fet. The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-
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Description
The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a n.
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Specifications in this document are tentative and subject to change
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The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-.
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650V GaN FET in TO-263 (source tab)
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Description
The TP65H050BS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-.
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Description
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Description
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TP65H050G4WS - 650V FET
(Renesas)
Specifications in this document are tentative and subject to change
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TP65H050G4WS
650V SuperGaN® FET in TO-247 (source tab)
Description
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