TP65H035G4QS Datasheet (Renesas)

TP65H035G4QS, 650V SuperGaN FET

The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

The Gen IV SuperGaN® platform uses advanced epi and

TP65H035G4QS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Enhanced inrush current capability

* Very low QRR

* Reduced crossover loss

* Kelvin source f