TP65H300G4LSG Datasheet (Renesas)

TP65H300G4LSG, 650V SuperGaN FET

Specifications in this document are tentative and subject to change Datasheet TP65H300G4LSG 650V SuperGaN® FET in PQFN (source tab) PDereslcimripintaioryn Datasheet The TP65H300G4LSG 650V, 240 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to s

TP65H300G4LSG Features

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over-voltage capability

* Enhanced inrush current capability

* Very low QRR

* Reduced c