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TP65H300G4LSG Datasheet - Renesas

TP65H300G4LSG 650V SuperGaN FET

Specifications in this document are tentative and subject to change Datasheet TP65H300G4LSG 650V SuperGaN® FET in PQFN (source tab) PDereslcimripintaioryn Datasheet The TP65H300G4LSG 650V, 240 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to s.

TP65H300G4LSG Features

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over-voltage capability

* Enhanced inrush current capability

* Very low QRR

* Reduced c

TP65H300G4LSG Datasheet (925.66 KB)