* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced c
TP65H300G4LSG Datasheet (925.66 KB)
TP65H300G4LSG
925.66 KB
650v supergan fet.
Specifications in this document are tentative and subject to change
Datasheet
TP65H300G4LSG
650V SuperGaN® FET in PQFN (source tab)
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