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H5N3008P Silicon N Channel MOS FET High Speed Power Switching

H5N3008P Description

H5N3008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0539-0300 Rev.3.00 Oct 16, 2006 .

H5N3008P Features

* Low on-resistance
* Low leakage current www. DataSheet4U. com
* High speed switching
* Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta =

H5N3008P Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon Channel MOS FET High Speed Power Switching Renesas Technology
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