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H7N0312AB - Silicon N-Channel MOSFET

H7N0312AB Description

H7N0312AB Silicon N Channel MOS FET High Speed Power Switching .

H7N0312AB Features

* Low on-resistance RDS (on) = 2.6 mΩ typ.
* Low drive current
* 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 123 G S REJ03G1127-0400 (Previous: ADE-208-1571B) Rev.4.00 Sep 07, 2005 1. Gate 2. D

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Silicon N-Channel MOSFET Renesas Technology
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