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H7N1005LD - Silicon N Channel MOS FET High Speed Power Switching

H7N1005LD Description

H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0200 Rev.2.00 Oct 16, 2006 .

H7N1005LD Features

* Low on-resistance RDS (on) = 85 mΩ typ. www. DataSheet4U. com
* Low drive current
* Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name

H7N1005LD Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon Channel MOS FET High Speed Power Switching Renesas Technology
Renesas Technology H7N1005LD-like datasheet

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