RU1H40L Datasheet - Ruichips

RU1H40L N-Channel Advanced Power MOSFET

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Si.

RU1H40L Features

* 100V/40A, RDS (ON) =22mΩ(Typ.)@VGS=10V RDS (ON) =28mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* Fast Switching and Fully Avalanche Rated

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Appl

RU1H40L Datasheet (288.18 KB)