RU1H7H
Ruichips
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N-channel advanced power mosfet. SOP-8 Applications
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RU1H100 - N-Channel Advanced Power MOSFET
(Ruichips)
RU1H100
N-Channel Advanced Power MOSFET
Features
• 100V/75A RDS (ON)=11mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Extremely high dv/dt capability.
RU1H100R - N-Channel Advanced Power MOSFET
(Ruichips)
RU1H100R
N-Channel Advanced Power MOSFET
Features
• 100V/75A RDS (ON)=11mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Extremely high dv/dt capabilit.
RU1H130Q - N-Channel Advanced Power MOSFET
(Ruichips)
RU1H130Q
N-Channel Advanced Power MOSFET
Features
•100V/130A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design • Ultra Low On-Resistance • .
RU1H130R - N-Channel Advanced Power MOSFET
(Ruichips)
RU1H130R
N-Channel Advanced Power MOSFET
Features
•100V/130A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design • Ultra Low On-Resistance • .
RU1H130S - N-Channel Advanced Power MOSFET
(Ruichips)
RU1H130S
N-Channel Advanced Power MOSFET
Features
•100V/130A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design • Ultra Low On-Resistance • .
RU1H150R - N-Channel Advanced Power MOSFET
(Ruichips)
RU1H150R
N-Channel Advanced Power MOSFET
Features
• 100V/150A, RDS (ON) =3.5mΩ(Typ.)@VGS=10V
• Advanced SGT MOSFET Technology • Ultra Low On-Resistan.
RU1H190R - N-Channel Advanced Power MOSFET
(Ruichips)
RU1H190R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A
• Ultra Low On-Resistance • Exceptional .
RU1H190S - N-Channel Advanced Power MOSFET
(Ruichips)
RU1H190S
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A
• Ultra Low On-Resistance • Exceptional .
RU1H300Q - N-Channel Advanced Power MOSFET
(Ruichips)
RU1H300Q
N-Channel Advanced Power MOSFET
Features
• 100V/300A,
RDS (ON) =3mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance • Exceptional dv/dt capability •.
RU1H35K - N-Channel Advanced Power MOSFET
(Ruichips)
RU1H35K
N-Channel Advanced Power MOSFET
Features
• 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Le.