RU1H7H N-Channel Advanced Power MOSFET

Ruichips

RU1H7H Description

.
SOP-8 Applications. SMPS Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VD.

RU1H7H Features

* 100V/6A, RDS (ON) =40mΩ (Typ. ) @ VGS=10V
* Super High Dense Cell Design
* Reliable and Rugged

RU1H7H Applications

* SMPS Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mount

📥 Download Datasheet

RU1H7H Datasheet Preview — Preview of RU1H7H PDF

Datasheet Details

Part number: RU1H7H
Manufacturer: Ruichips
File Size: 262.79 KB
Datasheet: RU1H7H-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

📁 Related Datasheet

RU1 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU1890B04 - RF Module (Samsung)
RU1890B04GCA - RF Module (Samsung)
RU1890B04UAA - RF Module (Samsung)
RU1890H04 - RF Module (Samsung)
RU1890H04CAA - RF Module (Samsung)
RU1890H04CDA - RF Module (Samsung)
RU1A - FAST RECOVERY RECTIFIER DIODES (EIC)

📌 All Tags

N-Channel Advanced Power MOSFET Ruichips

Ruichips RU1H7H-like datasheet

RU1H100 - N-Channel Advanced Power MOSFET
RU1H100R - N-Channel Advanced Power MOSFET
RU1H130Q - N-Channel Advanced Power MOSFET
RU1H130R - N-Channel Advanced Power MOSFET
RU1H130S - N-Channel Advanced Power MOSFET
RU1H150R - N-Channel Advanced Power MOSFET