RU1H80R Datasheet - Ruichips

RU1H80R N-Channel Advanced Power MOSFET

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S.

RU1H80R Features

* 100V/80A, RDS (ON) =9mΩ (Typ.) @ VGS=10V

* Ultra Low On-Resistance

* Exceptional dv/dt capability

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Available Applications

RU1H80R Datasheet (318.64 KB)

RU1H80R Datasheet Preview — Preview of RU1H80R PDF

Datasheet Details

Part number:

RU1H80R

Manufacturer:

Ruichips

File Size:

318.64 KB

Description:

N-channel advanced power mosfet.

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RU1H80R N-Channel Advanced Power MOSFET Ruichips

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