RU1H80R - N-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU1H80R
Manufacturer	Ruichips
File Size	318.64 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H80R Datasheet
Additional preview pages of the RU1H80R datasheet.

Product details

Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanch

Features

100V/80A, RDS (ON) =9mΩ (Typ. ) @ VGS=10V.
Ultra Low On-Resistance.
Exceptional dv/dt capability.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Available.

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Published: Apr 10, 2017 |