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RU1H80R

N-Channel Advanced Power MOSFET

RU1H80R Features

* 100V/80A, RDS (ON) =9mΩ (Typ.) @ VGS=10V

* Ultra Low On-Resistance

* Exceptional dv/dt capability

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Available Applications

RU1H80R General Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S.

RU1H80R Datasheet (318.64 KB)

Preview of RU1H80R PDF

Datasheet Details

Part number:

RU1H80R

Manufacturer:

Ruichips

File Size:

318.64 KB

Description:

N-channel advanced power mosfet.

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RU1H80R N-Channel Advanced Power MOSFET Ruichips

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