RU1H80R Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU1H80R, N-Channel Advanced Power MOSFET

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S

RU1H80R Features

* 100V/80A, RDS (ON) =9mΩ (Typ.) @ VGS=10V

* Ultra Low On-Resistance

* Exceptional dv/dt capability

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Available Applications