RU1HC2H - N-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU1HC2H
Manufacturer	Ruichips
File Size	349.99 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1HC2H Datasheet
Additional preview pages of the RU1HC2H datasheet.

Product details

Description

SOP-8 Absolute Maximum Ratings Complementary MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current (VGS=±10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junctio

Features

N-Channel 100V/3.5A, RDS (ON) =75mΩ (Typ. ) @ VGS=10V RDS (ON) =80mΩ (Typ. ) @ VGS=4.5V.
P-Channel -100V/-2.5A, RDS (ON) =155mΩ (Typ. ) @ VGS=-10V RDS (ON) =175mΩ (Typ. ) @ VGS=-4.5V.
Reliable and Rugged.
ESD Protected.
Lead Free and Green Available.

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Published: Apr 10, 2017 |