MJD44
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Complementary silicon pnp transistors. The MJD44H11 is a silicon multiepitaxial planar NPN transistors mounted in DPAK plastic package. It is inteded for various switching
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MJD41C - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min.
MJD41C - Complementary Power Transistors
(Kexin)
SMD Type
Transistors
Complementary Power Transistors
MJD41C(NPN) MJD42C(PNP)
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves.
MJD41C - Complementary Power Transistors
(ON)
MJD41C (NPN), MJD42C (PNP)
Complementary Power Transistors
DPAK for Surface Mount Applications
Designed for general purpose amplifier and low speed s.
MJD41C - General Purpose Amplifier
(Fairchild)
MJD41C
MJD41C
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Applica.
MJD41C - SILICON POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD41C/D
Complementary Power Transistors
• • • • •
MJD41C* PNP MJD42C*
*Motorola Pref.
MJD41C - Epitaxial Planar NPN Transistor
(GME)
Epitaxial Planar NPN Transistor
FEATURES
Low formed for surface mount application.
Pb
Lead-free
Electrically similar to popular and TIP41C.
.
MJD41C - 100V NPN MEDIUM POWER TRANSISTOR
(DIODES)
Features
BVCEO > 100V IC = 6A Continuous Collector Current ICM = 10A Peak Pulse Current Ideal for Power Switching or Amplification Application.
MJD42 - General Purpose Amplifier
(Fairchild)
MJD42C
MJD42C
General Purpose Amplifier Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-P.
MJD42C - PNP Transistor
(SeCoS)
Elektronische Bauelemente
MJD42C
-6A, -100V P P Plastic-Encapsulate Transistors
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre.
MJD42C - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(M.