STGE200NB60S
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N-channel igbt. Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBT
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STGE50NB60HD - N-CHANNEL IGBT
(ST Microelectronics)
®
STGE50NB60HD
N-CHANNEL 50A - 600V ISOTOP PowerMESH™ IGBT
PRELIMINARY DATA
T YPE STGE50NB60HD
s
V CES 600 V
V CE(sat) < 2.8 V
IC 50 A
s s s s s.
STGE50NC60VD - N-channel 50A - 600V - ISOTOP Very fast PowerMESTM IGBT
(STMicroelectronics)
..
STGE50NC60VD
N-channel 50A - 600V - ISOTOP Very fast PowerMESH™ IGBT
Features
Type STGE50NC60VD
■ ■ ■ ■
VCES 600V
VCE(sat) (Max.
STGE50NC60WD - N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT
(STMicroelectronics)
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STGE50NC60WD
N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESH™ IGBT
Features
Type STGE50NC60WD
■ ■ ■ ■
VCES 600V
VC.
STG1 - N-channel Power MOSFET
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STT6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package
Datasheet - production data
4 5 6
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SOT.
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STG15M120F3D7 - IGBT
(STMicroelectronics)
STG15M120F3D7
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Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing
C G
Features
• 10 µs of short-circuit withstand.
STG15M120F3D8 - IGBT
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STG15M120F3D8
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1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing
C G
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STG200G65FD8AG - IGBT
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STG200G65FD8AG
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Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing
C
Features
G E
EGCD
.
STG200M65F2D8AG - IGBT
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STG200M65F2D8AG
Datasheet
Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing
C
Features
• AEC-Q101 quali.