STP08IE120F4 Datasheet (ST Microelectronics) - Emitter Switched Bipolar Transistor

STP08IE120F4, Emitter Switched Bipolar Transistor

The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.

It is designed for use in Gate Driven based topologies.

Order codes Part Number STP08IE120F4 Marking P08IE120F4 Package TO220FP-4L Packing Tube November

STP08IE120F4 Features

* www.DataSheet4U.com VCS(ON) 0.8 V IC 8A RCS(ON) 0.10 W

* High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L