STP130NH02L Datasheet (ST Microelectronics)

STP130NH02L, N-channel Power MOSFET

The STB_P130NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.

It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents.

Figure 2: Internal Schematic Diagram APPLICATIONS * SYNCHRONOUS RE

STP130NH02L Features

* TYPE STB130NH02L STP130NH02L

* STB130NH02L STP130NH02L Figure 1:Package RDS(on) < 0.0044 Ω < 0.0044 Ω ID 90 A(2) 90 A(2) VDSS 24 V 24 V TYPICAL RDS(on) = 0.0034 Ω @ 10 V TYPICAL RDS(on) = 0.005 Ω @ 5 V RDS(ON)

* Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSE