STP13NK60FP, STP13NK60Z Datasheet - ST Microelectronics

STP13NK60FP N-channel Power MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

www.DataSheet4U.com STP13NK60Z/FP, STB13NK60Z STB13NK60Z-1, STW13NK60Z N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z-1 STW13NK60Z s s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 0.55 Ω < 0.55 Ω < 0.55 Ω < 0.55 Ω < 0.55 Ω ID 13 13 13 13 13 A A A A A Pw 150 W 35 W 150 W 150 W 150 W TO-220 3 1 2 TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE .

STP13NK60FP Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STP13NK60Z_STMicroelectronics.pdf