STP13N60M2 - N-channel Power MOSFET
This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology.
Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high effic
STP13N60M2 Features
* TAB TO-220 1 23 D(2, TAB) Order code VDS RDS(on) max. ID STP13N60M2 600 V 380 mΩ 11 A
* Extremely low gate charge
* Excellent output capacitance (Coss) profile
* 100% avalanche tested
* Zener-protected Applications
* Switching applications G
