STP13NM60N Datasheet - ST Microelectronics

STP13NM60N N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate charge. They are therefore suitable for the mo.

STP13NM60N Features

* 3 12 TO-220FP TAB 1 23 I2PAK TAB TO-220 1 23 3 12 IPAK Order codes VDS RDS(on) max. STF13NM60N STI13NM60N STP13NM60N 600 V 360 mΩ STU13NM60N

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance ID 11 A D(2, TAB) Applica

STP13NM60N_STMicroelectronics.pdf