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STP13NM60N N-Channel MOSFET

STP13NM60N Description

Isc N-Channel MOSFET Transistor *.

STP13NM60N Features

* Typical RDS(on)=0.28Ω
* Low gate input resistance
* 100% avalanche tested
* Low input capacitance and gate charge
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STP13NM60N Applications

* Switching applications INCHANGE Semiconductor STP13NM60N
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 11 6.93 44 PD Total Dissipatio

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Datasheet Details

Part number
STP13NM60N
Manufacturer
INCHANGE
File Size
185.58 KB
Datasheet
STP13NM60N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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