STP19N06 Datasheet (ST Microelectronics) - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP19N06, N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

www.DataSheet4U.com STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.1 Ω < 0.1 Ω ID 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOI