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STP19N06FI, STP19N06 Datasheet - ST Microelectronics

STP19N06FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

www.DataSheet4U.com STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.1 Ω < 0.1 Ω ID 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOI.

STP19N06_STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STP19N06FI, STP19N06. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

STP19N06FI, STP19N06

Manufacturer:

STMicroelectronics ↗

File Size:

216.53 KB

Description:

N-channel enhancement mode power mos transistor.

Note:

This datasheet PDF includes multiple part numbers: STP19N06FI, STP19N06.
Please refer to the document for exact specifications by model.

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STP19N06FI STP19N06 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ST Microelectronics

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