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STP19N06LFI, STP19N06L Datasheet - ST Microelectronics

STP19N06LFI N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

www.DataSheet4U.com STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI s s s s s s s s VDSS 60 V 60 V R DS(on) < 0.1 Ω < 0.1 Ω ID 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH S.

STP19N06L_STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STP19N06LFI, STP19N06L. Please refer to the document for exact specifications by model.
STP19N06LFI Datasheet Preview Page 2 STP19N06LFI Datasheet Preview Page 3

Datasheet Details

Part number:

STP19N06LFI, STP19N06L

Manufacturer:

STMicroelectronics ↗

File Size:

123.53 KB

Description:

N-channel enhancement mode low threshold power mos transistor.

Note:

This datasheet PDF includes multiple part numbers: STP19N06LFI, STP19N06L.
Please refer to the document for exact specifications by model.

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STP19N06LFI STP19N06L N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ST Microelectronics

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