STP34NM60N Datasheet - ST Microelectronics

STP34NM60N Power MOSFET

These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficien.

STP34NM60N Features

* Type STF34NM60N STP34NM60N STW34NM60N

* VDSS 600 V 600 V 600 V RDS(on) max. 0.105 Ω 0.105 Ω 0.105 Ω ID 29 A 29 A 29 A PTOT 40 W 210 W 210 W 2 1 3 1 3 2 TO-247 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 2 TO-220FP Applicat

STP34NM60N Datasheet (1.30 MB)