STP6NK70Z

N-CHANNEL MOSFET

ST Microelectronics

STP6NK70Z Features

* TYPE STP6NK70Z STF6NK70Z s s s s s s s Figure 1: Package ID 5A 5 A (

* ) Pw 110 W 30 W VDSS 700 V 700 V RDS(on) < 1.8 Ω < 1.8 Ω TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD M

STP6NK70Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

STP6NK70Z Datasheet (361.46 KB)