RF2L36040CF2 - RF power LDMOS transistor

STMicroelectronics

RF2L36040CF2 Datasheet Preview — Preview of RF2L36040CF2 PDF

Datasheet Details

Part number	RF2L36040CF2
Manufacturer	STMicroelectronics ↗
File Size	499.38 KB
Description	RF power LDMOS transistor
Datasheet	RF2L36040CF2-STMicroelectronics.pdf

RF2L36040CF2 Product details

Description

The RF2L36040CF2 is a 40 W, 28 V internally matched LDMOS FET, designed for cellular and S-band radar applications at frequencies from 2.7 to 3.6 GHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L36040CF2 3600 MHz 28 V 40 W 14 dB 48%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally matched for ease of use.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the european directive 2002/95/EC.

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Published: Mar 14, 2023 |