RF2L36075CF2 - RF power LDMOS transistor

STMicroelectronics

RF2L36075CF2 Datasheet Preview — Preview of RF2L36075CF2 PDF

Datasheet Details

Part number	RF2L36075CF2
Manufacturer	STMicroelectronics ↗
File Size	1.35 MB
Description	RF power LDMOS transistor
Datasheet	RF2L36075CF2-STMicroelectronics.pdf

RF2L36075CF2 Product details

Description

The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L36075CF2 3500 MHz 28 V 75 W 12.5 dB 45%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internal input matching for ease of use.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the european directive 2002/95/EC.

📁 RF2L36075CF2 Similar Datasheet

RF2L6S - Super Fast Recovery Diode (Rohm)
RF2001 - SAW Filter (REYCONNS)
RF2001NS2D - Super Fast Recovery Diode (ROHM)
RF2001NS2DFH - Super Fast Recovery Diode (ROHM)
RF2001NS3D - Fast Recovery Diodes (Rohm)
RF2001NS3DFH - Super Fast Recovery Diode (ROHM)
RF2001T2D - Fast Recovery Diode (Rohm)
RF2001T2DFH - Fast Recovery Diode (ROHM)

Other Datasheets by STMicroelectronics

RF2L36040CF2 - RF power LDMOS transistor
RF2L15200CB4 - RF power LDMOS transistor
RF2L16080CF2 - RF power LDMOS transistor
RF2L16180CB4 - RF power LDMOS transistor
RF2L16180CF2 - RF power LDMOS transistor
RF2L24280CB4 - RF Power LDMOS transistor

Published: Mar 14, 2023 |