RF2L36075CF2

RF power LDMOS transistor

STMicroelectronics

RF2L36075CF2 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L36075CF2 3500 MHz 28 V 75 W 12.5 dB 45%

* High efficiency and linear gain operations

* Integrated ESD protection

* Internal input matching for ease of use

* Large positive and negative gate-source voltage ra

RF2L36075CF2 General Description

The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all typical cellular base station modulation formats. Product sta.

RF2L36075CF2 Datasheet (1.35 MB)

RF2L36075CF2 Datasheet Preview — Preview of RF2L36075CF2 PDF

Datasheet Details

Part number:

RF2L36075CF2

Manufacturer:

STMicroelectronics ↗

File Size:

1.35 MB

Description:

Rf power ldmos transistor.
RF2L36075CF2 Datasheet 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor 1 3 2 B2 Pin connection Pin Connection 1 Gate 2 Source (bottom si.

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RF2L36075CF2 power LDMOS transistor STMicroelectronics

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RF2L36075CF2 Features

RF2L36075CF2 General Description

Datasheet Details

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Description:

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