Datasheet Details
Part number:
STB18N60DM2
Manufacturer:
File Size:
632.34 KB
Description:
N-channel power mosfet.
STB18N60DM2-STMicroelectronics.pdf
Datasheet Details
Part number:
STB18N60DM2
Manufacturer:
File Size:
632.34 KB
Description:
N-channel power mosfet.
STB18N60DM2, N-channel Power MOSFET
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.
It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift
STB18N60DM2 Features
* Order code VDS RDS(on) max. STB18N60DM2 600 V 0.295 Ω
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on-resistance
* 100% avalanche tested
* Extremely high dv/dt ruggedness
* Zener-protected ID 12 A Applicat
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