Datasheet Details
- Part number
- STB18N60DM2
- Manufacturer
- STMicroelectronics ↗
- File Size
- 632.34 KB
- Datasheet
- STB18N60DM2-STMicroelectronics.pdf
- Description
- N-channel Power MOSFET
STB18N60DM2 Description
STB18N60DM2 Datasheet N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 .
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.
STB18N60DM2 Features
* Order code
VDS
RDS(on) max. STB18N60DM2
600 V
0.295 Ω
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on-resistance
* 100% avalanche tested
* Extremely high dv/dt ruggedness
* Zener-protected
ID 12 A
Applicat
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