* Order code VDS RDS(on) max. STB18N60DM2 600 V 0.295 Ω
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on-resistance
* 100% avalanche tested
* Extremely high dv/dt ruggedness
* Zener-protected ID 12 A Applicat
STB18N60DM2 Datasheet (632.34 KB)
STB18N60DM2
632.34 KB
N-channel power mosfet.
STB18N60DM2
Datasheet
N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475V1
.
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