STB18N60M2 Datasheet - STMicroelectronics

STB18N60M2 N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converter.

STB18N60M2 Features

* Order codes VDS @ TJmax RDS(on) max. STB18N60M2 STI18N60M2 STP18N60M2 650 V 0.280 Ω STW18N60M2

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected ID 13 A Package D²PAK I²PAK TO-220 TO-247 Appl

STB18N60M2-STMicroelectronics.pdf