STB18NF30 Datasheet - STMicroelectronics

STB18NF30 N-CHANNEL POWER MOSFET

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu.

STB18NF30 Features

* TAB 3 1 D²PAK Figure 1. Internal schematic diagram 'RU7$%

* 6 Order code STB18NF30 VDSS 330 V RDS(on) max. 180 mΩ ID 18 A

* Designed for automotive applications and AEC-Q101 qualified

* 100% avalanche tested

* 175 °C junction temperature Applications

STB18NF30-STMicroelectronics.pdf