STB18NM80 Datasheet - STMicroelectronics

STB18NM80 N-channel Power MOSFET

These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Ut.

STB18NM80 Features

* Order codes STB18NM80 STF18NM80 STP18NM80 STW18NM80 VDSS 800 V 800 V 800 V 800 V RDS(on) max < 0.295 Ω < 0.295 Ω < 0.295 Ω < 0.295 Ω ID 3 3 1 2 17 A 17 A (1) 17 A 17 A 1 D²PAK TO-220FP 1. Limited only by maximum temperature allowed 3

* 100% avalanche tested Low input capacitan

STB18NM80-STMicroelectronics.pdf