* Order code VDS RDS(on) max. STB18N60M6 600 V 280 mΩ
* Reduced switching losses
* Lower RDS(on) per area vs previous generation
* Low gate input resistance
* 100% avalanche tested
* Zener-protected ID 13 A Applications
* Switching applications
STB18N60M6 Datasheet (608.61 KB)
STB18N60M6
608.61 KB
N-channel power mosfet.
STB18N60M6
Datasheet
N-channel 600 V, 230 mΩ typ., 13 A, MDmesh™ M6 Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475V1
.
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