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STB18N20 Datasheet - ST Microelectronics

STB18N20 N-CHANNEL Power MOSFET

www.DataSheet4U.com STB18N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B18N20 V DSS 200 V R DS(on) < 0.18 Ω ID 18 A s s s s s s s s s TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR .

STB18N20_STMicroelectronics.pdf

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Datasheet Details

Part number:

STB18N20

Manufacturer:

STMicroelectronics ↗

File Size:

148.15 KB

Description:

N-channel power mosfet.

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STB18N20 STB18N20 N-CHANNEL Power MOSFET ST Microelectronics

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