STG35M120F3D7 IGBT

STMicroelectronics

Description

STG35M120F3D7 Datasheet 1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing C G .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

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Datasheet Specifications

Part number: STG35M120F3D7
Manufacturer: STMicroelectronics ↗
File Size: 179.70 KB
Datasheet: STG35M120F3D7-STMicroelectronics.pdf
Description: IGBT

Features

* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.85 V (typ. ) @ IC = 35 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution

Applications

* Motor control E
* Industrial drives EGCD
* PFC
* UPS
* Solar

STG35M120F3D7 Distributors

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STG35M120F3D7 IGBT STMicroelectronics

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