STG35M120F3D7 Datasheet (STMicroelectronics)

STG35M120F3D7, IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

Furthermore, t

STG35M120F3D7 Features

* 10 μs of short-circuit withstand time

* Low VCE(sat) = 1.85 V (typ.) @ IC = 35 A

* Positive VCE(sat) temperature coefficient

* Tight parameter distribution

* Maximum junction temperature: TJ = 175 °C Applications

* Motor control E

* Indust