STG35M120F3D7 Datasheet, Igbt, STMicroelectronics

STG35M120F3D7 Features

• Igbt
• 10 μs of short-circuit withstand time
• Low VCE(sat) = 1.85 V (typ.) @ IC = 35 A
• Positive VCE(sat) temperature coefficient
• Tight parameter distribu

PDF File Details

Part number:

STG35M120F3D7

Manufacturer:

STMicroelectronics ↗

File Size:

179.70kb

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📄 Datasheet

Description:

Igbt. This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IG

STG35M120F3D7 Application

• Applications
• Motor control E
• Industrial drives EGCD
• PFC
• UPS
• Solar
• General purpose

TAGS

STG35M120F3D7

STMicroelectronics

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