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STGB30H60DFB 600V 30A IGBT

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Description

STGB30H60DFB, STGP30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT TAB TAB 3 1 D2PAK TO-220 1 23 .
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

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Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.55 V (typ. ) @ IC = 30 A
* Tight parameter distribution
* Safe paralleling
* Positive VCE(sat) tem

Applications

* Photovoltaic inverters

STGB30H60DFB Distributors

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