STGB30H60DFB Datasheet, Igbt, STMicroelectronics

STGB30H60DFB Features

• Igbt
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ I

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Part number:

STGB30H60DFB

Manufacturer:

STMicroelectronics ↗

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819.52kb

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📄 Datasheet

Description:

Igbt. These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB

STGB30H60DFB Application

• Applications
• Photovoltaic inverters
• High frequency converters Description These devices are IGBTs developed using an advanced pr

TAGS

STGB30H60DFB

STMicroelectronics

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