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STGB30H60DLLFBAG Datasheet - STMicroelectronics

Automotive-grade trench gate field-stop IGBT

STGB30H60DLLFBAG Features

* AEC-Q101 qualified

* Maximum junction temperature: TJ = 175 °C

* Logic level gate drive

* High speed switching series

* Minimized tail current

* VCE(sat) = 1.7 V (typ.) @ IC = 30 A

* Low VF soft recovery co-packaged diode

* Tight parameters distribution

* Safer

STGB30H60DLLFBAG General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slig.

STGB30H60DLLFBAG Datasheet (0.98 MB)

Preview of STGB30H60DLLFBAG PDF

Datasheet Details

Part number:

STGB30H60DLLFBAG

Manufacturer:

STMicroelectronics ↗

File Size:

0.98 MB

Description:

Automotive-grade trench gate field-stop igbt.
STGB30H60DLLFBAG Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1.

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STGB30H60DLLFBAG Automotive-grade trench gate field-stop IGBT STMicroelectronics

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