STGB30H60DLLFBAG Datasheet - STMicroelectronics

STGB30H60DLLFBAG Automotive-grade trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slig.

STGB30H60DLLFBAG Features

* AEC-Q101 qualified

* Maximum junction temperature: TJ = 175 °C

* Logic level gate drive

* High speed switching series

* Minimized tail current

* VCE(sat) = 1.7 V (typ.) @ IC = 30 A

* Low VF soft recovery co-packaged diode

* Tight parameters distribution

* Safer

STGB30H60DLLFBAG-STMicroelectronics.pdf