STGB30H60DLLFBAG Automotive-grade trench gate field-stop IGBT

STMicroelectronics

Description

STGB30H60DLLFBAG Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

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Datasheet Specifications

Part number: STGB30H60DLLFBAG
Manufacturer: STMicroelectronics ↗
File Size: 0.98 MB
Datasheet: STGB30H60DLLFBAG-STMicroelectronics.pdf
Description: Automotive-grade trench gate field-stop IGBT

Features

* AEC-Q101 qualified
* Maximum junction temperature: TJ = 175 °C
* Logic level gate drive
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.7 V (typ. ) @ IC = 30 A
* Low VF soft recovery co-packaged diode
* Tight parameters distribution
* Safer

STGB30H60DLLFBAG Distributors

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STGB30H60DLLFBAG Automotive-grade trench gate field-stop IGBT STMicroelectronics

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