* 6 µs of short-circuit withstand time
* VCE(sat) = 1.55 V (typ.) @ IC = 30 A
* Tight parameters distribution
* Safer paralleling
* Low thermal resistance
* Soft and very fast recovery antiparallel diode Applications
* Motor control
* UPS
* PFC Description This de
STGB30M65DF2 Datasheet (876.14 KB)
STGB30M65DF2
876.14 KB
Trench gate field-stop igbt.
STGB30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a D2PAK package
Datasheet - production data
TAB
2 3
1
D²PAK
Figure 1: Int.
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