STGB30M65DF2 Datasheet, Igbt, STMicroelectronics

STGB30M65DF2 Features

  • Igbt
  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
  • Tight parameters distribution
  • Safer paralleling
  • Low thermal r

PDF File Details

Part number:

STGB30M65DF2

Manufacturer:

STMicroelectronics ↗

File Size:

876.14kb

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📄 Datasheet

Description:

Trench gate field-stop igbt. This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series I

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Page 2 of STGB30M65DF2 Page 3 of STGB30M65DF2

STGB30M65DF2 Application

  • Applications
  • Motor control
  • UPS
  • PFC Description This device is an IGBT developed using an advanced proprietary trench g

TAGS

STGB30M65DF2
Trench
gate
field-stop
IGBT
STMicroelectronics

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Stock and price

part
STMicroelectronics
IGBT TRENCH FS 650V 60A TO-263
DigiKey
STGB30M65DF2
1604 In Stock
Qty : 500 units
Unit Price : $1.3
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