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STGB35N35LZ

IGBT

STGB35N35LZ Features

* Designed for automotive applications and AEC-Q101 qualified

* Low threshold voltage

* Low on-voltage drop

* High voltage clamping feature

* Logic level gate charge

* ESD gate-emitter protection

* Gate and gate-emitter integrated resistors App

STGB35N35LZ General Description

This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition sys.

STGB35N35LZ Datasheet (714.43 KB)

Preview of STGB35N35LZ PDF

Datasheet Details

Part number:

STGB35N35LZ

Manufacturer:

STMicroelectronics ↗

File Size:

714.43 KB

Description:

Igbt.
STGB35N35LZ STGP35N35LZ Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ TAB 3 1 D²PAK TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal.

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STGB35N35LZ IGBT STMicroelectronics

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