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STGB35N35LZ Datasheet - STMicroelectronics

STGB35N35LZ IGBT

This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition sys.

STGB35N35LZ Features

* Designed for automotive applications and AEC-Q101 qualified

* Low threshold voltage

* Low on-voltage drop

* High voltage clamping feature

* Logic level gate charge

* ESD gate-emitter protection

* Gate and gate-emitter integrated resistors App

STGB35N35LZ Datasheet (714.43 KB)